ترانزیستور BUK7L06

www.DataSheet4U.com BUK7L06-34ARC TrenchPLUS standard level FET Rev. 03 — 3 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, integral gate resistor, ESD protection diodes and clamping diodes that are guaranteed to prevent the MOSFET avalanching. 1.2 Features s ESD and overvoltage protection s Internal gate resistor s Q101 compliant s On-state resistance 5.1 mΩ (typ). 1.3 Applications s 12 V loads s Motors, lamps and solenoids. 1.4 Quick reference data s VDSR(CL) = 41 V (typ) s ID ≤ 147 A s RDSon = 5.1 mΩ (typ) s Ptot ≤ 250 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning – SOT78C, simplified outline and symbol Simplified outline mb Description gate (g) drain (d) source (s) mounting base, connected to drain (d) Symbol d g s MBL521 1 2 3 MBL370 SOT78C (TO-220) DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors BUK7L06-34ARC TrenchPLUS standard level FET 3. Ordering information Table 2: Ordering information Package Name BUK7L06-34ARC TO-220 Description Version Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads. SOT78C Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb.