آی سی GAL16V8D

GAL16V8Z GAL16V8ZD Zero Power E2CMOS PLD Features • ZERO POWER E2CMOS TECHNOLOGY — 100µA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 12 ns Maximum Propagation Delay — Fmax = 83.3 MHz — 8 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Output Drive — UltraMOS® Advanced CMOS Technology • E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention • EIGHT OUTPUT LOGIC MACROCELLS — Maximum Flexibility for Complex Logic Designs — Programmable Output Polarity — Architecturally Similar to Standard GAL16V8 • PRELOAD AND POWER-ON RESET OF ALL REGISTERS — 100% Functional Testability • APPLICATIONS INCLUDE: — Battery Powered Systems — DMA Control — State Machine Control — High Speed Graphic.