آی سی BTS3410

Smart Low Side Power Switch HITFET BTS 3410G Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown with auto restart • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 200 mW Nominal load current ID(Nom) 1.3 A Clamping energy EAS 150 mJ Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. Vbb HITFET â In1 Pin 2 Logic Channel 1 Drain1 Pin 7and 8 Source1 Pin 1 M In2 Pin 4 Logic Channel 2 Drain2 Pin 5and 6 Source2 Pin 3 Complete product spectrum and additional information http://www.infineon.com/hitfet Datasheet 1 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Pin Description Pin Symbol 1 S1 2 IN1 3 S2 4 IN2 5 D2 6 D2 7 D1 8 D1 Function Source Channel 1 Input Channel 1 Source Channel 2 Input Channel 2 Drain Channel 2 Drain Channel 2 Drain Channel 1 Drain Channel 1 Pin Configuration (Top view) S1 1· IN1 2 S2 3 IN2 4 PG- DSO-8-25 8 D1 7 D1 6 D2 5 D2 HITFET â Pin 2 In1 Gate-Driving Unit ESD Overload Protection Pin 4 In2 Gate-Driving Unit ESD