DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 6.5 ±0.2 FEATURES 1.6 ±0.2 5.0 ±0.2 4 1.5 –0.1 +0.2 2.3 ±0.2 0.5 ±0.1 RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A) 1 2 3 • Low Ciss Ciss = 840 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 1.3 MAX. 7.0 MIN. 5.5 ±0.2 13.7 MIN. • Low On-Resistance 0.6 ±0.1 2.3 2.3 0.6 ±0.1 1. 2. 3. 4. Gate Drain Source Fin (Drain) MP-3 1.5 –0.1 +0.2 0.75 6.5 ±0.2 5.0 ±0.2 2.3 ±0.2 0.5 ±0.1 0.8 4.3 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ±20 ±10 ±40 20 1.0 150 10 10 V V A A W W °C A mJ 12.0 1.3 MAX. 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 MIN. 1. 2. 3. 4.