ترانزیستور 1NV04P

STMicroelectronics

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Description

VNN1NV04P-E, VNS1NV04P-E OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 250 m 1.7 A 40 V Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET 2 3 2 1 SOT-223 SO-8 Description The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. September 2013 Table 1. Device summary Package Order codes Tube Tape and reel SOT-223 VNN1NV04P-E VNN1NV04PTR-E SO-8 VNS1NV04P-E VNS1NV04PTR-E Doc ID 15586 Rev 3 1/28 www.st.com 28 Contents Contents VNN1NV04P-E, VNS1NV04P-E 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data…