توضیحات

ترانزیستور QN0406

IPD80N04S3-06 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD80N04S3-06
Marking Code: QN0406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 36 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 660 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm
Package: TO252