آی سی 1NV04DP

STMicroelectronics

 Download VNS1NV04D Datasheet

 

 

® VNS1NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D (*) Per each device RDS(on) 250 mΩ (*) Ilim 1.7 A (*) Vclamp 40 V (*) n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT PIN n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE SO-8 POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 BLOCK DIAGRAM www.DataSheet4U.com Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN1 DRAIN2 OVERVOLTAGE CLAMP INPUT1 GATE CONTROL OVERVOLTAGE CLAMP GATE CONTROL INPUT2 OVER TEMPERATURE LINEAR CURRENT LIMITER LINEAR CURRENT LIMITER OVER TEMPERATURE SOURCE1 SOURCE2 February 2003 1/14 1 VNS1NV04D ABSOLUTE MAXIMUM RATING Symbol VDSn VINn IINn RIN MINn IDn IRn VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VINn=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output…