آی سی HAT2215R

HAT2215R Silicon N Channel Power MOSFET High Speed Power Switching Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 1 234 78 DD 56 DD 2 4 G G S1 MOS1 S3 MOS2 Data Sheet REJ03G0486-0301 Rev.3.01 Jan 20, 2017 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 80 Gate to source voltage VGSS 20 Drain current ID 3.4 Drain peak current ID(pulse)Note1 20.4 Reverse drain current IDR 3.4 Channel dissipation Pch Note2 1.5 Channel dissipation Pch Note3 2.2 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW  10 s, duty cycle  1% 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10 s 3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10 s (Ta = 25°C) Unit V V A A A W W C C REJ03G0486-0301 Rev.3.01 Jan 20, 2017 Page 1 of 7 HAT2215R Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fal.