ترانزیستور کوئل غرب استیل V3040D

ON Semiconductor

Description

V3040D 3STV ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features SCIS Energy = 300 mJ at TJ = 25°C Logic Level Gate Drive This Device is Pb−Free and is RoHS Compliant AEC−Q101 Qualified and PPAP Capable Applications Automotive Ignition Coil Driver Circuits High Current Ignition System Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C Unless Otherwise Stated) Parameter Symbol Value Units Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) ISCIS = 14.2 A, L = 3.0 mHz, RGE = 1 KW (Note 1), TC = 25°C ISCIS = 10.6 A, L = 3.0 mHz, RGE = 1 KW (Note 2), TC = 150°C Collector Current Continuous, at VGE = 4.0 V, TC = 25°C Collector Current Continuous, at VGE = 4.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD PD TJ, TSTG 400 24 300 170 21 17 ±10 150 1 −55 to 175 V V mJ mJ A A V W W/°C °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 300 °C Reflow soldering according to JESD020C HBM−Electrostatic Discharge Voltage at100 pF, 1500 W TPKG ESD 260 °C 4 kV CDM−Electrostatic Discharge Voltage at 1W ESD 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may oc…