ترانزیستور کوئل G18N40BG

www.DataSheet4U.com NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. • Ideal for Coil−on−Plug Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Integrated Gate−Emitter Resistor (RGE) • Emitter Ballasting for Short−Circuit Capability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD ESD PD TJ, Tstg Value 430 430 18 18 50 8.0 800 115 0.77 −55 to +175 Unit VDC VDC VDC ADC AAC kV V Watts W/°C °C 1 Gate http://onsemi.com 18 AMPS 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V C G RGE E D2PAK CASE 418B S.