ترانزیستور BUK856-800A

Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications. QUICK REFERENCE DATA SYMBOL VCE IC Ptot VCEsat Eoff PARAMETER Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off energy Loss MAX. 800 24 125 3.5 1.0 UNIT V A W V mJ PINNING – TO220AB PIN 1 2 3 tab gate collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c g 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCGR ±VGE IC IC ICLM ICM Ptot Tstg Tj PARAMETER Collector-emitter voltage Collector-gate voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector Current (Clamped Inductive Load) Collector current (pulsed peak value, on-state) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGE = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tj ≤ Tjmax. VCL ≤ 500 V Tj ≤ Tjmax. Tmb = 25 ˚C MIN. -5 – 55 MAX. 800 800 30 24 12 40 50 125 150 150 UNIT V V V A A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS In free air TYP. 60 MAX. 1.0 UNIT K/W K/W March 1993 1 Rev 1.000 Philips Semiconduc.