2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 D G S 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain ADE-208-535 1st. Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse) I DR I AP * 3 EAR* 3 Pch*2 Tch Tstg Ratings 60 ±20 15 60 15 15 19 25 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 Electrical Characteristics (Ta = 25°C) Item Symbol Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current I DSS Gate to source leak current IGSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF Body to drain diode reverse trr recovery time Note: 1. Pulse test Min 60 ±20 — — 1.5 — — 7 — — — — — — — — — 2SK2926(L), 2SK29.