www.vishay.com SQD30N05-20L Vishay Siliconix Automotive N-Channel 55 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package 55 0.020 0.026 30 Single TO-252 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-252 Drain connected to tab G S D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C a TC = 125 °C VDS VGS ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range IAS EAS PD TJ, Tstg LIMIT 55 ± 20 30 19 30 120 20 20 50 16 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1″ square PCB (FR4 material). d. Parametric verification ongoing. SYMBOL RthJA RthJC LIMIT 60 3 UNIT V A mJ W °C UNIT °C/W S15-1873-Rev. D, 10-Aug-15 1 Document Number: 67054 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRO.