توضیحات
کاتالوگ: دیتاشیت AULR024N
LR024N MOSFET. Datasheet pdf. Equivalent
Type Designator: LR024N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 41.7 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 16.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19.8 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.073(typ) Ohm
Package: TO252
LR024N Transistor Equivalent Substitute – MOSFET Cross-Reference Search
LR024Nwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor D
نقد و بررسیها
هنوز بررسیای ثبت نشده است.