ترانزیستور BUK9237

BUK9237-55A N-channel TrenchMOS logic level FET Rev. 3 — 9 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 55 32 77 V A W Static characteristics RDSon VGS = 10 V; ID = 15 A; Tj = 25 °C VGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 11; see Figure 12 28 31 33 37 mΩ mΩ NXP Semiconductors BUK9237-55A N-channel TrenchMOS logic level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 76 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 32 A; Vsup ≤ 30 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain c…