ترانزیستور D30NF06

www.DataSheet4U.com N-CHANNEL 60V – 0.022Ω – 35A DPAK/IPAK STripFET™ POWER MOSFET TYPE STD30NF06L s s s s STD30NF06L VDSS 60 V RDS(on) <0.028Ω ID 35 A s s TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS 3 2 1 3 1 IPAK DPAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE Symbol VDS VDGR VGS ID ID m ABSOLUTE MAXIMUM RATINGS Parameter Value 60 60 ± 20 35 25 140 70 0.46 25 – 55 to 175 (1) ISD ≤ 38A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS , Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C 4U Tj eet IDM (l) PTOT Sh ata dv/dt (1) Tstg (q) Pulse width limited by safe operating area ww w.D July 2002 .co Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Tempe.